| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3511HMSPBF LT3511HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LDNC |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology Corporation
|
| LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3512 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
